Strategic Partnership Between Axcelis and GE Aerospace Advances High-Voltage Silicon Carbide Power Device Development

In August 2025, Axcelis Technologies and GE Aerospace announced a Joint Development Program (JDP) to pioneer production-worthy 6.5 to 10kV superjunction silicon carbide (SiC) power devices, leveraging Axcelis’ Purion XEmax™ high-energy implanter. This partnership is a pivotal moment for the semiconductor industry, reflecting both the rising importance of wide bandgap semiconductors and the strategic necessity of domestic manufacturing capacity. The collaboration is positioned within the federally funded Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub, led by North Carolina State University, and aligns with U.S. initiatives to secure critical technology supply chains.

The significance of this JDP extends beyond technical innovation. SiC devices are essential for a new generation of high-performance power electronics, enabling applications in aerospace, defense, electric vehicles, renewable energy, and advanced computing. By combining Axcelis’ expertise in high-energy ion implantation with GE Aerospace’s decades-long SiC research, the partnership aims to deliver devices that operate at voltages previously unattainable, with efficiency and reliability required for mission-critical systems.

The broader context includes rapid market growth, with the global SiC market projected to reach $12.39 billion by 2034, and increasing government investment in semiconductor R&D and Manufacturing. This article examines the technical, economic, and strategic dimensions of the Axcelis-GE Aerospace partnership, providing insight into the future trajectory of power electronics and the semiconductor industry.

Foundations of Silicon Carbide Technology and Ion Implantation

Silicon carbide (SiC) represents a transformative advance in semiconductor materials. Its wide bandgap structure enables operation at higher voltages, temperatures, and frequencies than traditional silicon (Si) devices. This makes SiC especially valuable for power electronics, where efficiency, thermal management, and miniaturization are critical. SiC devices can function at temperatures up to 200°C, well above silicon’s typical 125°C limit, and achieve higher power densities, reducing the need for bulky cooling systems.

The manufacturing of SiC devices relies on ion implantation, a process that precisely introduces dopants into the semiconductor substrate. This process is more challenging for SiC compared to silicon due to its crystalline structure and higher binding energies, requiring advanced implanters capable of delivering energies above 10 MeV. The Purion XEmax™ implanter, central to this JDP, offers the industry’s highest beam currents over a broad energy range, making it uniquely suited for deep junction formation in high-voltage devices.

Superjunction technology further enhances device performance by overcoming the trade-off between breakdown voltage and on-resistance in conventional MOSFETs. By alternating p-type and n-type regions, superjunction devices maintain charge balance, enabling lower resistance at higher voltages. This innovation is crucial for next-generation applications demanding both high efficiency and high voltage operation.

Technical Challenges and Innovations

The development of 6.5 to 10kV superjunction devices involves complex technical challenges. Achieving the necessary junction depth and dopant concentration requires precise control of implantation parameters at ultra-high energies. The Purion XEmax’s patented Boost technology allows for the generation of high-energy beams with improved beam current and reduced contamination, addressing critical manufacturing hurdles.

Uniformity across large wafer areas is essential for superjunction architectures, as minor variations can impact device performance and reliability. The XEmax system’s beam line optimization and advanced angle control capabilities provide the precision needed for high-yield, high-volume manufacturing.

Beyond device development, the partnership aims to establish scalable, production-worthy processes. This focus on manufacturability is vital for translating research breakthroughs into commercial products that meet the demands of automotive, aerospace, and industrial customers.

“High voltage SiC power devices are an important enabler for a wide array of critical emerging applications and future endeavors, including hypersonic travel, electric propulsion, and space exploration.” , Dr. Ljubisa Stevanovic, Chief Engineer, GE Aerospace Research

Market Drivers and Application Areas

The SiC power device market is experiencing robust growth, driven by trends in electrification, renewable energy, and advanced transportation. Electric vehicles (EVs) require power electronics that can handle high voltages and currents efficiently, directly influencing vehicle range and performance. SiC devices enable smaller, lighter, and more efficient powertrains, supporting the automotive industry’s shift towards electrification.

Aerospace applications benefit from SiC’s ability to operate at high temperatures and voltages, reducing cooling requirements and system complexity. For example, GE Aerospace’s SiC power modules already achieve 40% space savings and double the cooling capacity compared to conventional designs, addressing the strict size and weight constraints of aircraft and spacecraft.

Renewable energy systems, such as solar and wind, rely on high-efficiency power conversion to maximize output and grid integration. SiC devices’ superior performance at high voltages supports the deployment of more resilient and efficient power grids, a key priority as renewable energy adoption expands globally.

Corporate Profiles and Strategic Positioning

Axcelis Technologies, headquartered in Beverly, Massachusetts, is a global leader in ion implantation solutions for semiconductor manufacturing. The company’s Purion platform covers high-energy, high-current, and medium-current implant applications, with a dominant market share in SiC-specific equipment. In 2024, Axcelis reported $1.02 billion in revenue, with power device markets accounting for a significant portion of system shipments.

Axcelis’s strategic focus on SiC processing aligns with industry trends toward electrified transportation and energy systems. The capital intensity of SiC device fabrication, about five times greater than for silicon, creates substantial revenue opportunities for equipment suppliers. Axcelis’s comprehensive toolset and process expertise foster long-term partnerships with leading semiconductor manufacturers.

GE Aerospace brings deep expertise in SiC technology, with a research legacy spanning more than three decades. The company’s SiC-based power products are deployed in avionics and electrical systems for commercial aircraft and ground vehicles. GE Aerospace’s ongoing research targets future flight operations in extreme environments, including hypersonic vehicles and electric propulsion, underscoring the strategic importance of high-voltage SiC devices.

Role of the CLAWS Hub and Government Policy

The Axcelis-GE Aerospace JDP is embedded in the CLAWS Hub, part of the U.S. Department of Defense’s Microelectronics Commons program. This initiative, led by North Carolina State University, aims to accelerate the development and commercialization of wide bandgap semiconductors through coordinated academic, industry, and government collaboration.

Federal investments, including $19 million for the CLAWS Hub, reflect recognition of wide bandgap semiconductors as critical for national security and economic competitiveness. The CHIPS and Science Act further supports domestic semiconductor manufacturing, with the goal of increasing the U.S. share of global advanced logic capacity from zero to 28% by 2032.

Industry partners in the CLAWS Hub include MACOM, Coherent Corp., and Adroit Materials, among others, providing a comprehensive ecosystem for technology development and supply chain resilience. These Partnerships are designed to bridge the gap between research innovation and scalable manufacturing.

“Axcelis is committed to providing equipment and process expertise that enables our customers’ superjunction device roadmaps.” , Russell Low, President and CEO, Axcelis Technologies

Global Competition, Supply Chain, and Future Outlook

The international landscape for SiC technology is highly competitive. While Asia-Pacific currently dominates SiC device consumption, North America and Europe lead in equipment and materials innovation. U.S. initiatives like the CLAWS Hub and CHIPS Act are responses to both economic opportunity and strategic concerns about supply chain vulnerabilities, particularly given Taiwan’s central role in global semiconductor manufacturing.

Axcelis’s main competitor in ion implantation is Applied Materials, but Axcelis’s specialized focus and comprehensive Purion platform provide differentiation, especially for SiC applications. The technical complexity and capital requirements of SiC device manufacturing create high barriers to entry, favoring established players with deep process expertise.

Looking forward, the market for SiC devices is expected to grow rapidly, with expanding applications in automotive, aerospace, industrial automation, and energy. The successful commercialization of 6.5 to 10kV superjunction devices could unlock new system architectures, enabling more efficient power conversion and grid integration. Future technology roadmaps may extend beyond SiC to include ultrawide bandgap materials like gallium oxide and diamond, leveraging the manufacturing and process knowledge developed through current partnerships.

System-Level and Economic Impact

The impact of high-voltage SiC devices will be felt across multiple sectors. In automotive, they enable higher voltage architectures that support faster charging and improved efficiency. In aerospace, they reduce system weight and complexity, supporting next-generation electric propulsion and hypersonic applications. For the energy sector, they facilitate more resilient and efficient grid infrastructure.

Economic benefits include not only direct revenue from device and equipment sales but also broader productivity gains and job creation in advanced manufacturing. The CLAWS Hub’s focus on workforce development and regional technology clusters is designed to amplify these effects, positioning the U.S. as a leader in wide bandgap semiconductor innovation.

As the industry continues to evolve, partnerships like that between Axcelis and GE Aerospace will be critical for maintaining technological leadership and meeting the demands of emerging applications. The integration of advanced power devices into system-level solutions will drive further innovation, efficiency, and competitiveness across the global economy.

Conclusion

The Axcelis-GE Aerospace Joint Development Program marks a significant step forward in the evolution of high-voltage silicon carbide power devices. By combining Axcelis’s ion implantation technology with GE Aerospace’s SiC research expertise, the partnership is set to deliver production-ready superjunction devices that address the needs of automotive, aerospace, energy, and defense sectors.

Supported by federal initiatives and embedded within a robust ecosystem of academic and industry partners, this collaboration exemplifies the strategic approach needed to advance semiconductor technology and secure domestic supply chains. As SiC devices become increasingly central to the electrification of transportation, modernization of the grid, and the development of advanced computing and defense systems, the outcomes of this partnership will shape the future of power electronics and the broader semiconductor industry.

FAQ

What is the significance of silicon carbide (SiC) in power electronics?
SiC’s wide bandgap allows devices to operate at higher voltages, temperatures, and frequencies than traditional silicon, enabling more efficient, compact, and robust power electronics for automotive, aerospace, and energy applications.

What makes the Axcelis-GE Aerospace partnership unique?
The partnership combines Axcelis’s leadership in high-energy ion implantation with GE Aerospace’s extensive SiC device research, targeting production-ready 6.5 to 10kV superjunction devices, a capability not widely available in the industry.

How does the CLAWS Hub support this collaboration?
The CLAWS Hub, funded by the U.S. Department of Defense and led by NC State University, provides a framework for coordinated research, development, and commercialization of wide bandgap semiconductors, supporting the Axcelis-GE Aerospace JDP and broader industry growth.

What are the main application areas for high-voltage SiC devices?
Key applications include electric vehicles, aerospace propulsion, renewable energy systems, advanced grid infrastructure, and emerging fields like quantum computing and AI.

What are the market prospects for SiC technology?
The global SiC market is projected to reach $12.39 billion by 2034, driven by electrification trends and increasing demand for high-efficiency power electronics.

Sources:

• Axcelis Technologies Press Release
• GE Aerospace
• PR Newswire