GE Aerospace and Wolfspeed Partner on High-Voltage SiC Modules

On June 8, 2026, GE Aerospace (GE) and Wolfspeed Inc. (WOLF) entered into a Memorandum of Understanding (MOU) to jointly develop standard high-voltage silicon carbide (SiC) power modules, aiming to reduce system complexity for next-generation aerospace, defense, and industrial platforms.

Announced in a press release issued from Wolfspeed’s Durham, North Carolina headquarters, the agreement centers on the supply of Wolfspeed’s 10-kilovolt (kV) SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) die. The collaboration seeks to accelerate the commercial readiness of high-voltage SiC solutions. These components enable systems to operate with fewer series-connected devices, resulting in more compact, efficient, and reliable power delivery.

Strategic alignment and domestic sourcing

The partnership aligns with United States Government priorities to secure domestic supply chains for critical technologies. High-voltage SiC components are increasingly required for strategic markets, including artificial intelligence (AI) infrastructure and advanced defense systems.

Wolfspeed manufactures 200-millimeter silicon carbide wafers in high volume. The company recently expanded its focus on high-demand sectors by launching a dedicated Data Center Solutions Team in Silicon Valley on June 1, 2026, to address power requirements for AI infrastructure.

“By securing domestic sourcing of high-power silicon carbide modules, the two companies are jointly committed to enabling systems that improve efficiency and lower time-to-power. High-voltage silicon carbide is finally production ready exactly as the market confronts a power-delivery crunch legacy silicon cannot solve,” said Robert Feurle, CEO of Wolfspeed.

Aerospace and defense applications

For GE Aerospace, the MOU builds on recent milestones in electrical power and hybrid propulsion. On June 1, 2026, the company announced the qualification of high-voltage power solutions for U.S. military ground vehicles. The following day, GE Aerospace completed ground tests of a megawatt-class hybrid electric engine system.

The integration of 10 kV SiC MOSFET die into standardized power modules is expected to support solid-state transformers and broader industrial electrification efforts. GE Aerospace recently demonstrated its fourth generation of silicon carbide power MOSFET devices at its Research Center in Niskayuna, New York, focusing on improvements in switching speed, efficiency, and durability.

“Separately, our two companies have contributed to several industry-first technologies. Together, we’re ready to shape a robust value chain of high-power silicon carbide based on a mutual appreciation for achieving smaller, lighter, more efficient high-voltage end systems,” said Kris Shepherd, President of Electrical Power for GE Aerospace.

AirPro News analysis

We view this Memorandum of Understanding as a critical step in addressing the aerospace industry’s growing demand for high-density electrical power. As aircraft manufacturers and defense contractors pursue hybrid-electric propulsion and more-electric aircraft architectures, legacy silicon components are reaching their physical limits in managing thermal loads and power distribution. By standardizing high-voltage silicon carbide modules, GE Aerospace and Wolfspeed are positioning themselves to resolve a significant bottleneck in the supply-chain. The emphasis on domestic sourcing also insulates these critical components from international trade volatility, a key consideration for U.S. defense procurement.

Sources: Wolfspeed